symbol parameters & conditions unit min. typ. max. v ce =10v, i c = 60 ma, class c c cb collector base capacitance: f = 1 mhz, i e = 0 pf 0.75 bipolarics, inc part number b 30 v140b silicon microwave power transistor high reliability gold metallization nitride passivation diffused ballast resistors ceramic, beo & stripline packages available v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 1.5 v i c collector current (instantaneous) 180 ma t j junction temperature 200 o c t stg storage temperature -65 to 200 o c v cbo collector-base voltage 60 v symbol parameters rating units absolute maximum ratings: features: common base package configuration high output power 1 w @ 1.0 ghz high gain bandwidth product f t = 8.0 ghz @ i c = 70 ma high gain g pe =12 db @ 1.0ghz performance d ata: electrical characteristics (t a = 25 o c) product data sheet p 1db power output at 1 db compression: f = 1.0 ghz w 1 collector efficiency class c % 65 h fe forward current transfer ratio: v cb = 8v, i c = 15 ma 20 60 100 p t total power dissipation w 1.5
bipolarics, inc. medium power silicon microwave transistor notes: (unless otherwise specified) 1. dimensions are in 2. tolerances: in .xxx = .005 mm .xx = .13 3. all dimensions nominal; subject to change without notice ( mm ) 5.0 min (all leads) 45 0.5+0.07 1.3 +0.4 -0.3 0.1 +0.06 -0.03 +0.4 -0.2 2.5 1.0+0.1 package style 70 : 0. 0 70 " stripline package style 3 5: micro-x 0. 0 85 " ceramic package style 23: 0. 230 " beo flange part number b 30 v140 b page 2 lead 1 2 3 4 package base emitter collector emitter 70 , 3 5 & 23
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